Datasheet Details
| Part number | CSD13303W1015 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 851.77 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | CSD13303W1015-etcTI.pdf |
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Overview: CSD13303W1015 .ti. SLPS298A – MAY 2012 – REVISED MAY 2012 N-Channel NexFET™ Power MOSFET Check for Samples:.
| Part number | CSD13303W1015 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 851.77 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | CSD13303W1015-etcTI.pdf |
|
|
|
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
Top View PRODUCT SUMMARY TA = 25°C unless otherwise stated VDS Drain to Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Voltage Threshold TYPICAL VALUE 12 3.9 0.4 VGS = 2.5V 18 VGS = 4.5V 16 0.85 UNIT V nC nC mΩ mΩ V ORDERING INFORMATION Device Package Media Qty CSD13303W1015 1 × 1.5 Wafer Level Package 7-inch reel 3000 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TSTG Storage Temperature Range TJ Operating Junction Temperature Range VALUE 12 ±8 3.5 31 1.65 UNIT V V A A W –55 to 150 °C (1) Typical RθJA = 75.7°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤1ms, duty cycle ≤2% RDS(on) - On-State Resistance - mΩ VGS - Gate-to-Source Voltage (V) 50 45 40 35 30 25 20 15 10 5 0 0 RDS(ON) vs VGS TC = 25°C Id = 1.5A TC = 125ºC Id = 1.5A TC = 25ºC Id = 3.5A TC = 125ºC Id = 3.5A 1 2 3 4 5 6 7 8 VGS - Gate-to- Source Voltage - V G001 6 ID = 3.5A 5 VDS = 10V Gate Charge 4 3 2 1 0 0 1 2 3 4 5 Qg - Gate Charge - nC (nC) G001 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments s
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