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CSD13303W1015 - N-Channel Power MOSFET

General Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Key Features

  • 1.
  • Ultra Low on Resistance.
  • Ultra Low Qg and Qgd.
  • Small Footprint.
  • Low Profile 0.62 mm Height.
  • Pb Free.
  • RoHS Compliant.
  • Halogen Free.
  • CSP 1 × 1.5 mm Wafer Level Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD13303W1015 www.ti.com SLPS298A – MAY 2012 – REVISED MAY 2012 N-Channel NexFET™ Power MOSFET Check for Samples: CSD13303W1015 FEATURES 1 • Ultra Low on Resistance • Ultra Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package APPLICATIONS • Battery Management • Load Switch • Battery Protection DESCRIPTION The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Top View PRODUCT SUMMARY TA = 25°C unless otherwise stated VDS Drain to Source Voltage Qg Gate Charge Total (4.