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CSD13383F4 - 12-V N-Channel Power MOSFET

General Description

This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Key Features

  • Low on-resistance.
  • Ultra low Qg and Qgd.
  • Ultra-small footprint (0402 case size).
  • 1.0 mm × 0.6 mm.
  • Low profile.
  • 0.36 mm height.
  • Integrated ESD protection diode.
  • Rated >2 kV HBM.
  • Rated >2 kV CDM.
  • Lead and halogen free.
  • RoHS compliant 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD13383F4 SLPS517C – DECEMBER 2014 – REVISED FEBRUARY 2022 CSD13383F4 12 V N-Channel FemtoFET™ MOSFET 1 Features • Low on-resistance • Ultra low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36 mm height • Integrated ESD protection diode – Rated >2 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for load switch applications • Optimized for general purpose Switching Applications • Single-cell battery applications • Handheld and mobile applications 3 Description This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications.