Datasheet Details
| Part number | CSD13201W10 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.32 MB |
| Description | N-Channel Power MOSFET |
| Datasheet | CSD13201W10-etcTI.pdf |
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Overview: Product Folder Sample & Buy Technical Documents Tools & Software Support & munity CSD13201W10 SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015 CSD13201W10 N-Channel NexFET™ Power MOSFET.
| Part number | CSD13201W10 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.32 MB |
| Description | N-Channel Power MOSFET |
| Datasheet | CSD13201W10-etcTI.pdf |
|
|
|
This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
Top View Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 12 2.3 0.3 VGS = 1.8 V 38 VGS = 2.5 V 29 VGS = 4.5 V 26 0.8 UNIT V nC nC mΩ mΩ V Device Information(1) PART NUMBER PACKAGE MEDIA QTY CSD13201W10 1 mm × 1 mm Wafer Level Package 7-inch reel 3000 SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Tstg Storage Temperature Range VALUE 12 ±8 1.6 20.2 1.2 –55 to 150 UNIT V V A A W °C (1) RθJA = 105°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
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