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CSD13306W Datasheet 12-v N-channel Power MOSFET

Manufacturer: Texas Instruments

Overview: Product Folder Sample & Buy Technical Documents Tools & Software Support & munity CSD13306W 12 V N Channel NexFET™ Power MOSFET CSD13306W SLPS537 – MARCH 2015.

General Description

This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1.5 mm outline with excellent thermal characteristics and an ultra low profile.

Top View GSS DDD Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Voltage Threshold TYPICAL VALUE 12 8.6 3.0 VGS = 2.5 V VGS = 4.5 V 1.0 12.9 8.8 UNIT V nC nC mΩ mΩ V Device CSD13306W CSD13306WT Ordering Information(1) Qty Media Package 3000 7-Inch Reel 250 7-Inch Reel 1.0 mm × 1.5 mm Wafer Level Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current(1) IDM Pulsed Drain Current (2) PD Power Dissipation(3) Tstg Storage Temperature Range TJ Operating Junction Temperature Range VALUE 12 ±10 3.5 44 1.9 UNIT V V A A W –55 to 150 °C (1) Device Operating at a temperature of 105ºC (2) Min Cu Typ RθJA = 230ºC/W, Pulse width ≤100 μs, duty cycle ≤1% (3) Max Cu Typ RθJA = 65ºC/W RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 40 TC = 25°C, I D = 1.5 A 35 TC = 125°C, I D = 1.5 A 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-To-Source Voltage (V) D007 Gate Charge 4.5 ID = 1.5 A 4 VDS = 6 V 3.5 3 2.5 2 1.5 1 0.5 0 0123456789 Qg - Gate Charge (nC) D004 1 An IMPORTANT NOTICE at the end of this da

Key Features

  • 1 Ultra Low on Resistance.
  • Low Qg and Qgd.
  • Small Footprint 1 × 1.5 mm.
  • Low Profile 0.62 mm Height.
  • Pb Free.
  • RoHS Compliant.
  • Halogen Free 2.

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