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CSD13381F4 - 12-V N-Channel Power MOSFET

General Description

This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Key Features

  • Low on-resistance.
  • Low Qg and Qgd.
  • Low threshold voltage.
  • Ultra-small footprint (0402 case size).
  • 1.0 mm × 0.6 mm.
  • Ultra-low profile.
  • Maximum height: 0.36-mm.
  • Integrated ESD protection diode.
  • Rated > 4-kV HBM.
  • Rated > 2-kV CDM.
  • Lead and halogen free.
  • RoHS compliant 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD13381F4 SLPS448F – JULY 2013 – REVISED JANUARY 2022 CSD13381F4 12-V N-Channel FemtoFET™ MOSFET 1 Features • Low on-resistance • Low Qg and Qgd • Low threshold voltage • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Ultra-low profile – Maximum height: 0.36-mm • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for load switch applications • Optimized for general purpose switching applications • Single-cell battery applications • Handheld and mobile applications 3 Description This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications.