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CSD13381F4 Datasheet 12-v N-channel Power MOSFET

Manufacturer: Texas Instruments

Overview: CSD13381F4 SLPS448F – JULY 2013 – REVISED JANUARY 2022 CSD13381F4 12-V N-Channel FemtoFET™ MOSFET.

General Description

This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-source voltage 12 Qg Gate charge total (4.5 V) 1060 Qgd Gate charge gate-to-drain 140 VGS = 1.8 V 310 RDS(on) Drain-to-source on-resistance VGS = 2.5 V 170 VGS = 4.5 V 140 VGS(th) Threshold voltage 0.85 UNIT V pC pC mΩ mΩ mΩ V DEVICE(1) CSD13381F4 CSD13381F4T Ordering Information QTY MEDIA PACKGE 3000 250 7-inch Femto (0402) 1.0-mm × reel 0.6-mm SMD lead less SHIP Tape and reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Key Features

  • Low on-resistance.
  • Low Qg and Qgd.
  • Low threshold voltage.
  • Ultra-small footprint (0402 case size).
  • 1.0 mm × 0.6 mm.
  • Ultra-low profile.
  • Maximum height: 0.36-mm.
  • Integrated ESD protection diode.
  • Rated > 4-kV HBM.
  • Rated > 2-kV CDM.
  • Lead and halogen free.
  • RoHS compliant 2.

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CSD13381F4 Distributor