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CSD13202Q2 - 12-V N-Channel Power MOSFET

General Description

This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications.

The SON 2 × 2 offers excellent thermal performance for the size of the package.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Lead-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 2-mm × 2-mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD13202Q2 SLPS313A – SEPTEMBER 2013 – REVISED JANUARY 2018 CSD13202Q2 12-V N-Channel NexFET™ Power MOSFETs 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 2-mm × 2-mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VAUE 12 5.1 0.76 VGS = 2.5 V 9.1 VGS = 4.5 V 7.5 0.