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CSD13202Q2 Datasheet 12-v N-channel Power MOSFET

Manufacturer: Texas Instruments

Overview: Product Folder Order Now Technical Documents Tools & Software Support & munity CSD13202Q2 SLPS313A – SEPTEMBER 2013 – REVISED JANUARY 2018 CSD13202Q2 12-V N-Channel NexFET™ Power MOSFETs.

General Description

This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications.

The SON 2 × 2 offers excellent thermal performance for the size of the package.

Top View D1 D D2 6D 5D G3 S 4S DEVICE CSD13202Q2 Device Information MEDIA QTY PACKAGE 7-Inch Reel 3000 SON 2.00-mm × 2.00-mm Plastic Package SHIP Tape and Reel Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limit) ID Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction, TSTG Storage Temperature EAS Avalanche Energy, Single Pulse ID = 20 A, L = 0.1 mH, RG = 25 Ω VALUE 12 ±8 22 14.4 76 2.7 UNIT V V A A W –55 to 150 °C 20 mJ (1) RθJA = 45°C/W on 1-in2 Cu (2-oz) on 0.06-in thick FR4 PCB.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Lead-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 2-mm × 2-mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage.

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CSD13202Q2 Distributor