CSD16321Q5C
CSD16321Q5C is N-Channel Power MOSFET manufactured by Texas Instruments.
FEATURES
- 2 Dual Cool™ Package SON 5×6mm
- Optimized for Two Sided Cooling
- Optimized for 5V Gate Drive
- Ultralow Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- Ro HS pliant and Halogen Free
APPLICATIONS
- Point-of-Load Synchronous Buck in Networking, Tele and puting Systems
- Optimized for Synchronous FET Applications
DESCRIPTION
The Nex FET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Drain
Gate
Top View DDD D
Source
Bottom View DDD D
VDS Qg Qgd
RDS(on)
VGS(th)
PRODUCT SUMMARY
Drain to Source Voltage
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
Drain to Source On Resistance Threshold Voltage
VGS = 3V VGS = 4.5V VGS = 8V
V n C n C 2.8 mΩ 2.1 mΩ 1.9 mΩ V
ORDERING INFORMATION
Device
Package
Media Qty
SON 5×6-mm Plastic...
