CSD17313Q2Q1 Datasheet | Texas Instruments

Features - 1 Qualified for Automotive Applications - Optimized for 5-V Gate Drive - Ultra-Low Qg and Qgd - Low Thermal Resistance - Pb-Free - Ro HS pliant - Halogen-Free - SON 2-mm × 2-mm Plastic Package 2 Applications - DC-DC Converters - Battery and Load Management Applications 3 Description This 30-V, 24-mΩ, 2-mm x 2-mm SON Nex FET™ power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package. Top View D1 D2 6D 5D G3 Added text for spacing 4S P0108-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 3 V VGS = 4.5 V VGS = 8 V 31 26 24 UNIT V n C n C mΩ mΩ mΩ V Ordering Information(1) PART NUMBER QTY MEDIA PACKAGE CSD17313Q2Q1...