CSD17552Q3A Datasheet | Texas Instruments

Features - 1 Ultra-Low Qg and Qgd - Low Thermal Resistance - Avalanche Rated - Pb Free - Ro HS pliant - Halogen Free - SON 3.3 mm × 3.3 mm Plastic Package 2 Applications - Point-of-Load Synchronous Buck in Networking, Tele, and puting Systems - Optimized for Control FET Applications 3 Description This 30 V, 5.5 mΩ, 3.3 mm × 3.3 mm SON Nex FET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 SPACE SPACE 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 4.5 V VGS = 10 V 6.5 5.5 UNIT V n C n C mΩ mΩ V DEVICE CSD17552Q3A CSD17552Q3AT Ordering Information(1) QTY...