Datasheet Details
| Part number | CSD17555Q5A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 742.70 KB |
| Description | N-Channel MOSFET |
| Download | CSD17555Q5A Download (PDF) |
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Overview: CSD17555Q5A www.ti.com SLPS353 – JUNE 2012 30V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17555Q5A RDS(on) - On-State Resistance - mΩ VGS - Gate-to-Source Voltage.
| Part number | CSD17555Q5A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 742.70 KB |
| Description | N-Channel MOSFET |
| Download | CSD17555Q5A Download (PDF) |
|
|
|
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 6D G4 D 5D 10 9 8 7 6 5 4 3 2 1 0 0 P0093-01 SPACE RDS(on) vs VGS TC = 25°C Id = 25A TC = 125ºC Id = 25A 2 4 6 8 10 VGS - Gate-to- Source Voltage - V 12 G001 PRODUCT SUMMARY TA = 25°C unless otherwise stated VDS Drain to Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 23 5 VGS = 4.5V VGS = 10V 1.5 2.8 2.3 UNIT V nC nC mΩ mΩ V ORDERING INFORMATION Device Package Media Qty CSD17555Q5A SON 5-mm × 6-mm Plastic Package 13-Inch Reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE VDS Drain to Source Voltage 30 VGS Gate to Source Voltage ±20 Continuous Drain Current (Package limited), TC = 25°C 100 ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current(1) 116 24 IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) 153 3 TJ, Operating Junction and Storage TSTG Temperature Range –55 to 150 EAS Avalanche Energy, single pulse ID = 60A, L = 0.1mH, RG = 25Ω 180 UNIT V V A A A W °C mJ (1) Typical RθJA = 42°C/W on 1-inch2 (6.45-cm2), 2-oz.
(0.071mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
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