Datasheet Details
| Part number | CSD17553Q5A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 747.23 KB |
| Description | N-Channel MOSFET |
| Download | CSD17553Q5A Download (PDF) |
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Overview: CSD17553Q5A www.ti.com 30V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17553Q5A SLPS373 – MAY.
| Part number | CSD17553Q5A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 747.23 KB |
| Description | N-Channel MOSFET |
| Download | CSD17553Q5A Download (PDF) |
|
|
|
The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 G4 12 10 6D D 5D P0093-01 Text 4 Spacing RDS(on) vs VGS TC = 25°C Id = 20A TC = 125ºC Id = 20A PRODUCT SUMMARY VDS Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 17.5 nC Qgd Gate Charge Gate to Drain 4.7 nC RDS(on) Drain to Source On Resistance VGS = 4.5V VGS = 10V 3.5 mΩ 2.7 mΩ VGS(th) Threshold Voltage 1.5 V ORDERING INFORMATION Device Package Media Qty CSD17553Q5A SON 5-mm × 6-mm Plastic Package 13-Inch Reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, Single Pulse ID = 45A, L = 0.1mH, RG = 25Ω VALUE 30 +/-20 100 23.5 151 3.1 UNIT V V A A A W –55 to 150 °C 101 mJ (1) Typical RθJA = 40.5°C/W on a 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
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