CSD17553Q5A Datasheet | Texas Instruments

FEATURES - Ultralow Qg and Qgd - Low Thermal Resistance - Avalanche Rated - Pb Free Terminal Plating - Ro HS pliant - Halogen Free - SON 5-mm × 6-mm Plastic Package APPLICATIONS - Point of load Synchronous Buck in Networking, Tele and puting Systems - Optimized for Control and Synchronous FET Applications DESCRIPTION The Nex FET power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 12 10 6D D 5D P0093-01 Text 4 Spacing RDS(on) vs VGS TC = 25°C Id = 20A TC = 125ºC Id = 20A PRODUCT SUMMARY VDS Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 17.5 n C Qgd Gate Charge Gate to Drain 4.7 n C RDS(on) Drain to Source On Resistance VGS = 4.5V VGS = 10V 3.5 mΩ 2.7 mΩ VGS(th) Threshold Voltage 1.5 V ORDERING INFORMATION Device...