CSD17556Q5B Datasheet | Texas Instruments

Features - 1 Extremely Low Resistance - Ultra-Low Qg and Qgd - Low-Thermal Resistance - Avalanche Rated - Lead-Free Terminal Plating - Ro HS pliant - Halogen Free - SON 5-mm × 6-mm Plastic Package 2 Applications - Point of Load Synchronous Buck in Networking, Tele, and puting Systems - Synchronous Rectification - Active ORing and Hotswap Applications 3 Description This 30-V, 1.2-mΩ, 5-mm × 6-mm Nex FET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications. Top View S1 8D S2 7D S3 G4 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 4.5 V VGS = 10 V 1.5 1.2 UNIT V n C n C mΩ DEVICE CSD17556Q5B CSD17556Q5BT Device...