CSD17559Q5 Datasheet | Texas Instruments

Features - 1 Extremely Low Resistance - Ultra-Low Qg and Qgd - Low Thermal Resistance - Avalanche Rated - Pb Free Terminal Plating - Ro HS pliant - Halogen Free - SON 5 mm × 6 mm Plastic Package 2 Applications - Point of Load Synchronous Buck in Networking, Tele, and puting Systems - Synchronous Rectification - Active ORing and Hotswap Applications 3 Description This 30 V, 0.95 mΩ, 5 × 6 mm SON Nex FET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications. Top View S1 8D S2 7D S3 G4 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 4.5 V VGS = 10 V 1.15 0.95 UNIT V n C n C mΩ mΩ V Device CSD17559Q5 CSD17559Q5T Ordering Information(1) Qty...