Datasheet Details
| Part number | CSD17575Q3 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 444.12 KB |
| Description | 30V N-Channe Power MOSFET |
| Datasheet | CSD17575Q3-etcTI.pdf |
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Overview: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17575Q3 SLPS489A – JUNE 2014 – REVISED AUGUST 2014 CSD17575Q3 30-V N-Channel NexFET™ Power MOSFET.
| Part number | CSD17575Q3 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 444.12 KB |
| Description | 30V N-Channe Power MOSFET |
| Datasheet | CSD17575Q3-etcTI.pdf |
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This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 G4 D 6D 5D P0095-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limit) VALUE 30 ±20 60 UNIT V V ID Continuous Drain Current (Silicon Limit), TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C TJ, Operating Junction and Tstg Storage Temperature Range EAS Avalanche Energy, single pulse ID = 48, L = 0.1 mH, RG = 25 Ω 182 27 240 2.8 108 –55 to 150 A A W °C 115 mJ (1) Typical RθJA = 45°C/W on 1-inch2 Cu (2 oz.) on 0.060-inch thick FR4 PCB.
(2) Max RθJC = 1.5°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 8 TC = 25°C,I D = 25A 7 TC =
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