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CSD17570Q5B - 30V N-Channe Power MOSFET

General Description

This 30 V, 0.56 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications.

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Key Features

  • 1 Ultra-Low Resistance.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5 mm × 6 mm Plastic Package 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD17570Q5B SLPS471D – FEBRUARY 2014 – REVISED MAY 2017 CSD17570Q5B 30 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Resistance • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • ORing and Hot Swap Applications 3 Description This 30 V, 0.56 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications. Top Icon S1 8D S2 7D S3 G4 D . . 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.