Datasheet4U Logo Datasheet4U.com

CSD17577Q3A - 30V N-Channe Power MOSFET

General Description

This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize resistance in power conversion applications.

Key Features

  • 1 Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free.
  • RoHS Compliant.
  • Halogen Free.
  • SON 3.3 mm × 3.3 mm Package 2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CSD10060 ZERO RECOVERY RECTIFIER ETC
CSD10060A ZERO RECOVERY RECTIFIER ETC
CSD10060B ZERO RECOVERY RECTIFIER ETC
CSD10060G ZERO RECOVERY RECTIFIER ETC
CSD10120 ZERO RECOVERY RECTIFIER ETC

Other Datasheets by Texas Instruments

Part Number Description
CSD17577Q5A 30V N-Channe Power MOSFET
CSD17570Q5B 30V N-Channe Power MOSFET
CSD17571Q2 30V N-Channe Power MOSFET
CSD17573Q5B 30V N-Channe Power MOSFET
CSD17575Q3 30V N-Channe Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD17577Q3A SLPS515A – AUGUST 2014 – REVISED JANUARY 2016 CSD17577Q3A 30 V N-Channel NexFET™ Power MOSFET 1 Features •1 Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free • SON 3.3 mm × 3.3 mm Package 2 Applications • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems • Optimized for Control, and Sync FET Applications 3 Description This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize resistance in power conversion applications. Top Icon S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.