CSD18504Q5A
Description
This 5.3mΩ, SON 5mm × 6mm, 40V NexFET™ power MOSFET is designed to minimize losses in power conversion applications. S1 8D S2 7D S3 G4 Top View 6D 5D P0093-01 20 18 TC = 25°C Id = 17A TC = 125ºC Id = 17A 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) G001 RDS(on) vs VGS Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 40 Qg Gate Charge Total (4.5V) 7.7 Qgd Gate Charge Gate-to-Drain 2.4 RDS(on) Drain-to-Source On-Resistance VGS = 4.5V VGS = 10V 7.5 5.3 VGS(th) Threshold Voltage 1.9 UNIT V nC nC mΩ mΩ V.
Key Features
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Logic level
- Pb free terminal plating
- RoHS compliant
- Halogen free
- SON 5mm × 6mm plastic package
