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CSD18504Q5A Datasheet Preview

CSD18504Q5A Datasheet

Power MOSFETs

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CSD18504Q5A
SLPS366E – JUNE 2012 – REVISED SEPTEMBER 2014
CSD18504Q5A 40-V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5 mm × 6 mm Plastic Package
2 Applications
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Battery Motor Control
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
40
7.7
2.4
VGS = 4.5 V 7.5
VGS = 10 V
5.3
1.9
UNIT
V
nC
nC
m
m
V
Ordering Information(1)
Device
Qty
Media
Package
CSD18504Q5A 2500 13-Inch Reel SON 5 mm × 6 mm
CSD18504Q5AT 250 7-Inch Reel
Plastic Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 5.3 mΩ, SON 5 × 6 mm, 40 V NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
40
±20
50
UNIT
V
V
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
75
A
Continuous Drain Current(1)
15
IDM Pulsed Drain Current(2)
Power Dissipation(1)
PD
Power Dissipation, TC = 25°C
275
A
3.1
W
77
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 150 °C
EAS
Avalanche Energy, single pulse
ID = 43 A, L = 0.1 mH, RG = 25
92
mJ
(1) Typical RθJA = 40°C/W on a 1-inch2 , 2-oz. Cu pad on a
0.06-inch thick FR4 PCB.
(2) Max RθJC = 2.0 °C/W, pulse duration 100 μs, duty cycle
1%
RDS(on) vs VGS
20
18
TC = 25°C Id = 17A
TC = 125ºC Id = 17A
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
ID = 17A
VDS = 20V
8
7
6
5
4
3
2
1
0
0
2
4
6
8 10 12 14 16
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




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CSD18504Q5A Datasheet Preview

CSD18504Q5A Datasheet

Power MOSFETs

No Preview Available !

CSD18504Q5A
SLPS366E – JUNE 2012 – REVISED SEPTEMBER 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Q5A Package Dimensions ........................................ 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Opening ............................. 10
7.4 Q5A Tape and Reel Information ............................. 10
4 Revision History
Changes from Revision D (August 2014) to Revision E
Page
• Increased pulsed current to 275 A ........................................................................................................................................ 1
• Updated the SOA in Figure 10 .............................................................................................................................................. 6
Changes from Revision C (May 2013) to Revision D
Page
• Added 7-inch reel to Ordering Information table ................................................................................................................... 1
• Added parameter for power dissipation with case temperature held to 25°C ....................................................................... 1
• Updated pulsed current conditions ........................................................................................................................................ 1
• Updated Figure 1 to a normalized RθJC curve ........................................................................................................................ 4
Changes from Revision B (November 2012) to Revision C
Page
• Updated this drawing table to include E3, e1, and e2 dimensions ....................................................................................... 8
• Added Stencil Pattern .......................................................................................................................................................... 10
Changes from Revision A (October 2012) to Revision B
Page
• Changed the RDS(on) vs VGS and Gate Charger graphs .......................................................................................................... 1
• Changed RθJA Max value From: 51 To: 50°C/W..................................................................................................................... 3
• Changed the Typical MOSFET Characteristics section ......................................................................................................... 4
Changes from Original (June 2012) to Revision A
Page
• Changed the Transconductance TYP value From: 63 S To: 71 S......................................................................................... 3
• Changed the Turn On and Turn Off Delay Time, Rise and Fall Time Test Conditions From: IDS = 17 A, RG = 2 To:
IDS = 17 A, RG = 0 ............................................................................................................................................................... 3
• Changed the Qrr Reverse Recovery Charge TYP value From: 18 nC To: 39 nC .................................................................. 3
2
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Description Power MOSFETs
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