Datasheet4U Logo Datasheet4U.com

CSD22206W - P-Channel Power MOSFET

Datasheet Summary

Description

This

8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

Features

  • 1 Ultra-Low Resistance.
  • Small Footprint 1.5 mm × 1.5 mm.
  • Lead Free.
  • Gate ESD Protection.
  • RoHS Compliant.
  • Halogen Free.
  • Gate-Source Voltage Clamp Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (.
  • 4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage.

📥 Download Datasheet

Datasheet preview – CSD22206W

Datasheet Details

Part number CSD22206W
Manufacturer Texas Instruments
File Size 951.77 KB
Description P-Channel Power MOSFET
Datasheet download datasheet CSD22206W Datasheet
Additional preview pages of the CSD22206W datasheet.

📁 Similar Datasheet

  • CSD20060 - ZERO RECOVERY RECTIFIER (ETC)
  • CSD20060D - ZERO RECOVERY RECTIFIER (ETC)
  • CSD202 - Bi-Directional Current and Power Monitor (AnalogySemi)
  • CSD20L45CT-A - Super Low Barrier High Voltage Power Rectifier (CITC)
  • CSD20N45 - N-Channel Trench Power MOSFET (CASS)
  • CSD-4xxx - NUMERIC/ALPHANUMBERIC DISPLAY (ETC)
  • CSD-822A9 - (CSD-822A9 / CSD-823A9) Digits Display (China Semiconductor)
  • CSD-822B7 - (CSD-822B7 / CSD-823B7) Digits Display (China Semiconductor)
  • CSD-822E - (CSD-822E / CSD-823E) Digits Display (China Semiconductor)
  • CSD-822G - (CSD-822G / CSD-823G) Digits Display (China Semiconductor)
Other Datasheets by Texas Instruments

Full PDF Text Transcription

Click to expand full text
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD22206W –8-V P-Channel NexFET™ Power MOSFET CSD22206W SLPS689 – MAY 2017 1 Features •1 Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE –8 11.2 1.8 VGS = –2.5 V 6.8 VGS = –4.5 V 4.7 –0.7 UNIT V nC nC mΩ V 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1.5-mm × 1.
Published: |