CSD22206W
CSD22206W is P-Channel Power MOSFET manufactured by Texas Instruments.
Features
- 1 Ultra-Low Resistance
- Small Footprint 1.5 mm × 1.5 mm
- Lead Free
- Gate ESD Protection
- Ro HS pliant
- Halogen Free
- Gate-Source Voltage Clamp
Product Summary
TA = 25°C
Drain-to-Source Voltage
Qg
Gate Charge Total (- 4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
- 8 11.2 1.8
VGS =
- 2.5 V 6.8 VGS =
- 4.5 V 4.7
- 0.7
UNIT V n C n C mΩ
2 Applications
- Load Switch Applications
- Battery Management
- Battery Protection
3 Description
This
- 8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Top View and Circuit Configuration
Source
DEVICE CSD22206W CSD22206WT
Device...