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CSD22206WT - P-Channel Power MOSFET

This page provides the datasheet information for the CSD22206WT, a member of the CSD22206W P-Channel Power MOSFET family.

Datasheet Summary

Description

This

8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

Features

  • 1 Ultra-Low Resistance.
  • Small Footprint 1.5 mm × 1.5 mm.
  • Lead Free.
  • Gate ESD Protection.
  • RoHS Compliant.
  • Halogen Free.
  • Gate-Source Voltage Clamp Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (.
  • 4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage.

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Datasheet preview – CSD22206WT

Datasheet Details

Part number CSD22206WT
Manufacturer Texas Instruments
File Size 951.77 KB
Description P-Channel Power MOSFET
Datasheet download datasheet CSD22206WT Datasheet
Additional preview pages of the CSD22206WT datasheet.

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Full PDF Text Transcription

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD22206W –8-V P-Channel NexFET™ Power MOSFET CSD22206W SLPS689 – MAY 2017 1 Features •1 Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE –8 11.2 1.8 VGS = –2.5 V 6.8 VGS = –4.5 V 4.7 –0.7 UNIT V nC nC mΩ V 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1.5-mm × 1.
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