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CSD22206WT Datasheet Preview

CSD22206WT Datasheet

P-Channel Power MOSFET

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CSD22206W –8-V P-Channel NexFET™ Power MOSFET
CSD22206W
SLPS689 – MAY 2017
1 Features
1 Ultra-Low Resistance
• Small Footprint 1.5 mm × 1.5 mm
• Lead Free
• Gate ESD Protection
• RoHS Compliant
• Halogen Free
• Gate-Source Voltage Clamp
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
–8
11.2
1.8
VGS = –2.5 V 6.8
VGS = –4.5 V 4.7
–0.7
UNIT
V
nC
nC
m
V
2 Applications
• Load Switch Applications
• Battery Management
• Battery Protection
3 Description
This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is
designed to deliver the lowest on resistance and gate
charge in the smallest outline possible with excellent
thermal characteristics in an ultra-low profile. Low on
resistance coupled with the small footprint and low
profile make the device ideal for battery operated
space constrained applications.
Top View and Circuit Configuration
G
S
S
Source
DEVICE
CSD22206W
CSD22206WT
Device Information
QTY
MEDIA
PACKAGE
3000
250
1.50-mm × 1.50-mm
7-Inch Reel
Wafer BGA
Package
SHIP
Tape
and
Reel
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current(1)
ID
Pulsed Drain Current(2)
VALUE
–8
–6
–5
–108
UNIT
V
V
A
A
PD Power Dissipation
TJ, Operating Junction,
Tstg Storage Temperature
1.7
W
–55 to 150 °C
(1) Device operating at a temperature of 105°C.
(2) Typ RθJA = 75°C/W ,mounted on FR4 material with maximum
Cu mounting area, pulse width 100 μs, duty cycle 1%.
S
S
S
Gate
DDD
Drain
RDS(on) vs VGS
30
TC = 25°C, I D = -2 A
TC = 125°C, I D = -2 A
25
20
15
10
5
0
0
1
2
3
4
5
6
-VGS - Gate-to-Source Voltage (V)
D007
Gate Charge
4.5
ID = -2 A
4 VDS = -4 V
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
12
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




etcTI

CSD22206WT Datasheet Preview

CSD22206WT Datasheet

P-Channel Power MOSFET

No Preview Available !

CSD22206W
SLPS689 – MAY 2017
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Receiving Notification of Documentation Updates.... 7
6.2 Community Resources.............................................. 7
6.3 Trademarks ............................................................... 7
6.4 Electrostatic Discharge Caution ................................ 7
6.5 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 CSD22206W Package Dimensions .......................... 8
7.2 Recommended Land Pattern .................................... 9
4 Revision History
DATE
May 2017
REVISION
*
NOTES
Initial release.
2
Submit Documentation Feedback
Product Folder Links: CSD22206W
Copyright © 2017, Texas Instruments Incorporated


Part Number CSD22206WT
Description P-Channel Power MOSFET
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