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CSD22206WT - P-Channel Power MOSFET

Download the CSD22206WT datasheet PDF. This datasheet also covers the CSD22206W variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This

8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

Key Features

  • 1 Ultra-Low Resistance.
  • Small Footprint 1.5 mm × 1.5 mm.
  • Lead Free.
  • Gate ESD Protection.
  • RoHS Compliant.
  • Halogen Free.
  • Gate-Source Voltage Clamp Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (.
  • 4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CSD22206W-etcTI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD22206W –8-V P-Channel NexFET™ Power MOSFET CSD22206W SLPS689 – MAY 2017 1 Features •1 Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE –8 11.2 1.8 VGS = –2.5 V 6.8 VGS = –4.5 V 4.7 –0.7 UNIT V nC nC mΩ V 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1.5-mm × 1.