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CSD22206WT Datasheet P-channel Power MOSFET

Manufacturer: Texas Instruments

Overview: Product Folder Order Now Technical Documents Tools & Software Support & Community CSD22206W –8-V P-Channel NexFET™ Power MOSFET CSD22206W SLPS689 – MAY 2017.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Top View and Circuit Configuration G S S Source DEVICE CSD22206W CSD22206WT Device Information QTY MEDIA PACKAGE 3000 250 1.50-mm × 1.50-mm 7-Inch Reel Wafer BGA Package SHIP Tape and Reel Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current(1) ID Pulsed Drain Current(2) VALUE –8 –6 –5 –108 UNIT V V A A PD Power Dissipation TJ, Operating Junction, Tstg Storage Temperature 1.7 W –55 to 150 °C (1) Device operating at a temperature of 105°C.

Key Features

  • 1 Ultra-Low Resistance.
  • Small Footprint 1.5 mm × 1.5 mm.
  • Lead Free.
  • Gate ESD Protection.
  • RoHS Compliant.
  • Halogen Free.
  • Gate-Source Voltage Clamp Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (.
  • 4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage.

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