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CSD23202W10T - P-Channel Power MOSFET

Download the CSD23202W10T datasheet PDF. This datasheet also covers the CSD23202W10 variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.

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Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Small Footprint 1 mm × 1 mm.
  • Low Profile 0.62-mm Height.
  • Pb Free.
  • Gate ESD Protection.
  • 3 kV.
  • RoHS Compliant.
  • Halogen Free 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CSD23202W10-etcTI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Texas Instruments

Part Number Description
CSD23202W10 P-Channel Power MOSFET
CSD23201W10 P-Channel Power MOSFET
CSD23203W P-Channel Power MOSFET
CSD23203WT P-Channel Power MOSFET
CSD23280F3 P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23202W10 SLPS506 – AUGUST 2014 CSD23202W10 12-V P-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile. . Top View D D G S P0097-01 . . . . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.