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CSD23382F4T Datasheet Preview

CSD23382F4T Datasheet

P-Channel Power MOSFET

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CSD23382F4
SLPS453C – MAY 2014 – REVISED OCTOBER 2014
CSD23382F4 12 V P-Channel FemtoFET™ MOSFET
1 Features
1 Low On-Resistance
• Ultra-Low Qg and Qgd
• Ultra-Small Footprint (0402 Case Size)
– 1.0 mm × 0.6 mm
• Low Profile
– 0.35 mm Max Height
• Integrated ESD Protection Diode
– Rated >2 kV HBM
– Rated >2 kV CDM
• Pb Terminal Plating
• Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Battery Applications
• Handheld and Mobile Applications
3 Description
This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint in
many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.
.
Typical Part Dimensions
0.35 mm
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
–12
1.04
0.15
VGS = –1.8 V 149
VGS = –2.5 V 90
VGS = –4.5 V 66
–0.8
UNIT
V
nC
nC
m
V
Device
CSD23382F4
CSD23382F4T
Ordering Information(1)
Qty
Media
Package
3000 7-Inch Reel
Femto (0402)
1.0 mm × 0.6 mm
250 7-Inch Reel Land Grid Array (LGA)
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID
Continuous Drain Current(1)
IDM
Pulsed Drain Current, TA = 25°C(2)
Continuous Gate Clamp Current
IG
Pulsed Gate Clamp Current(2)
PD
Power Dissipation(1)
Human Body Model (HBM)
V(ESD) Charged Device Model (CDM)
VALUE
–12
±8
–3.5
–22
–35
–350
500
2
2
UNIT
V
V
A
A
mA
mW
kV
kV
TJ,
Operating Junction and
Tstg Storage Temperature Range
–55 to 150 °C
(1) Typical RθJA = 85°C/W on 1 inch2 (6.45 cm2), 2 oz.
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4
PCB.
(2) Pulse duration 100 μs, duty cycle 1%
Top View
0.60 mm
.
.
1.00 mm
D
GS
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




etcTI

CSD23382F4T Datasheet Preview

CSD23382F4T Datasheet

P-Channel Power MOSFET

No Preview Available !

CSD23382F4
SLPS453C – MAY 2014 – REVISED OCTOBER 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Mechanical Dimensions ............................................ 8
7.2 Recommended Minimum PCB Layout...................... 9
7.3 Recommended Stencil Pattern ................................. 9
7.4 CSD23382F4 Embossed Carrier Tape
Dimensions .............................................................. 10
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (July 2014) to Revision C
Page
• Corrected timing VDS to read –6 V ......................................................................................................................................... 3
Changes from Revision A (June 2014) to Revision B
Page
• Corrected capacitance units to read pF in Figure 5 ............................................................................................................... 5
Changes from Original (May 2014) to Revision A
Page
• Changed device status to production ..................................................................................................................................... 1
2
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Copyright © 2014, Texas Instruments Incorporated


Part Number CSD23382F4T
Description P-Channel Power MOSFET
Maker etcTI
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