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CSD23382F4T - P-Channel Power MOSFET

Download the CSD23382F4T datasheet PDF. This datasheet also covers the CSD23382F4 variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Key Features

  • 1 Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • Ultra-Small Footprint (0402 Case Size).
  • 1.0 mm × 0.6 mm.
  • Low Profile.
  • 0.35 mm Max Height.
  • Integrated ESD Protection Diode.
  • Rated >2 kV HBM.
  • Rated >2 kV CDM.
  • Pb Terminal Plating.
  • Halogen Free.
  • RoHS Compliant 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CSD23382F4-etcTI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Texas Instruments

Part Number Description
CSD23382F4 P-Channel Power MOSFET
CSD23381F4 P-Channel Power MOSFET
CSD23381F4T P-Channel Power MOSFET
CSD23201W10 P-Channel Power MOSFET
CSD23202W10 P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23382F4 SLPS453C – MAY 2014 – REVISED OCTOBER 2014 CSD23382F4 12 V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ultra-Low Qg and Qgd • Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Low Profile – 0.35 mm Max Height • Integrated ESD Protection Diode – Rated >2 kV HBM – Rated >2 kV CDM • Pb Terminal Plating • Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.