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CSD23201W10 Datasheet P-channel Power MOSFET

Manufacturer: Texas Instruments

Overview: CSD23201W10 www.ti.com SLPS209A – AUGUST 2009 – REVISED MAY 2010 P-Channel NexFET™ Power MOSFET Check for Samples:.

General Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Top View D D G S PRODUCT SUMMARY VDS Drain to Source Voltage –12 V Qg Gate Charge Total (4.5V) 1.8 nC Qgd Gate Charge Gate to Drain 0.26 nC VGS = –1.5V 110 mΩ RDS(on) Drain to Source On Resistance VGS = –2.5V 77 mΩ VGS = –4.5V 66 mΩ VGS(th) Threshold Voltage –0.6 V ORDERING INFORMATION Device Package Media Qty CSD23201W10 1 × 1 Wafer Level Package 7-inch reel 3000 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) Continuous Gate Clamp Current IG Pulsed Gate Clamp Current PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range VALUE –12 –6 –2.2 –8.8 –0.5 –7 1 UNIT V V A A A A W –55 to 150 °C (1) RqJA = 100°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.

(2) Pulse width ≤300ms, duty cycle ≤2% P0097-01 RDS(on) − On-State Resistance − mΩ −VG − Gate Voltage − V 200 180 160 140 120 100 80 60 40 20 0 0 RDS(ON) vs VGS ID = −0.5A TC = 125°C TC = 25°C 1 2 3 4 5 −VGS − Gate to Source Voltage − V 6 G006 4.5 4.0 ID = −0.5A VDS = −6V 3.5 Gate Charge 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Qg − Gate Charge − nC G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instru

Key Features

  • 1.
  • Ultra Low Qg and Qgd.
  • Small Footprint 1mm × 1mm.
  • Low Profile 0.62mm Height.
  • Pb Free.
  • Gate ESD Protection.
  • 3kV.
  • RoHS Compliant.
  • Halogen Free.

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