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CSD23201W10 - P-Channel Power MOSFET

General Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

12 V Qg Gate Charge Total (4.5V) 1.8 nC

Key Features

  • 1.
  • Ultra Low Qg and Qgd.
  • Small Footprint 1mm × 1mm.
  • Low Profile 0.62mm Height.
  • Pb Free.
  • Gate ESD Protection.
  • 3kV.
  • RoHS Compliant.
  • Halogen Free.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD23201W10 www.ti.com SLPS209A – AUGUST 2009 – REVISED MAY 2010 P-Channel NexFET™ Power MOSFET Check for Samples: CSD23201W10 FEATURES 1 • Ultra Low Qg and Qgd • Small Footprint 1mm × 1mm • Low Profile 0.62mm Height • Pb Free • Gate ESD Protection – 3kV • RoHS Compliant • Halogen Free APPLICATIONS • Battery Management • Load Switch • Battery Protection DESCRIPTION The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Top View D D G S PRODUCT SUMMARY VDS Drain to Source Voltage –12 V Qg Gate Charge Total (4.5V) 1.8 nC Qgd Gate Charge Gate to Drain 0.26 nC VGS = –1.5V 110 mΩ RDS(on) Drain to Source On Resistance VGS = –2.5V 77 mΩ VGS = –4.