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CSD23280F3 - P-Channel Power MOSFET

General Description

This

12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

Key Features

  • 1 Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • High-Operating Drain Current.
  • Ultra-Small Footprint.
  • 0.73 mm × 0.64 mm.
  • Ultra-Low Profile.
  • 0.35-mm Max Height.
  • Integrated ESD Protection Diode.
  • Rated > 4-kV HBM.
  • Rated > 2-kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD23280F3 SLPS601A – APRIL 2016 – REVISED AUGUST 2017 CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ultra-Low Qg and Qgd • High-Operating Drain Current • Ultra-Small Footprint – 0.73 mm × 0.64 mm • Ultra-Low Profile – 0.35-mm Max Height • Integrated ESD Protection Diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.