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CSD23280F3 Datasheet P-channel Power MOSFET

Manufacturer: Texas Instruments

Overview: Product Folder Order Now Technical Documents Tools & Software Support & Community CSD23280F3 SLPS601A – APRIL 2016 – REVISED AUGUST 2017 CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET.

General Description

This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –12 0.95 0.068 VGS = –1.5 V 230 VGS = –1.8 V 180 VGS = –2.5 V 129 VGS = –4.5 V 97 –0.65 UNIT V nC nC mΩ V DEVICE CSD23280F3 CSD23280F3T Device Information(1) QTY MEDIA PACKAGE 3000 250 7-Inch Reel Femto 0.73-mm × 0.64-mm Land Grid Array (LGA) SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Key Features

  • 1 Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • High-Operating Drain Current.
  • Ultra-Small Footprint.
  • 0.73 mm × 0.64 mm.
  • Ultra-Low Profile.
  • 0.35-mm Max Height.
  • Integrated ESD Protection Diode.
  • Rated > 4-kV HBM.
  • Rated > 2-kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

CSD23280F3 Distributor

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