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CSD23280F3T - P-Channel Power MOSFET

Download the CSD23280F3T datasheet PDF. This datasheet also covers the CSD23280F3 variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This

12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

Key Features

  • 1 Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • High-Operating Drain Current.
  • Ultra-Small Footprint.
  • 0.73 mm × 0.64 mm.
  • Ultra-Low Profile.
  • 0.35-mm Max Height.
  • Integrated ESD Protection Diode.
  • Rated > 4-kV HBM.
  • Rated > 2-kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CSD23280F3-etcTI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Texas Instruments

Part Number Description
CSD23280F3 P-Channel Power MOSFET
CSD23201W10 P-Channel Power MOSFET
CSD23202W10 P-Channel Power MOSFET
CSD23202W10T P-Channel Power MOSFET
CSD23203W P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD23280F3 SLPS601A – APRIL 2016 – REVISED AUGUST 2017 CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ultra-Low Qg and Qgd • High-Operating Drain Current • Ultra-Small Footprint – 0.73 mm × 0.64 mm • Ultra-Low Profile – 0.35-mm Max Height • Integrated ESD Protection Diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.