CSD23280F3T Description
This 12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. (2) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
CSD23280F3T Key Features
- 1 Low On-Resistance
- Ultra-Low Qg and Qgd
- High-Operating Drain Current
- Ultra-Small Footprint
- 0.73 mm × 0.64 mm
- Ultra-Low Profile
- 0.35-mm Max Height
- Integrated ESD Protection Diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
CSD23280F3T Applications
- Optimized for Load Switch Applications
- Optimized for General Purpose Switching