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CSD23203W - P-Channel Power MOSFET

General Description

This 16.2-mΩ,

8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low RDS(on).
  • Small Footprint.
  • Low Profile 0.62-mm Height.
  • Lead Free.
  • RoHS Compliant.
  • Halogen Free.
  • CSP 1-mm × 1.5-mm Wafer Level Package 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23203W SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016 CSD23203W –8-V P-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. Top View D S G D S S Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.