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CSD23203WT - P-Channel Power MOSFET

Download the CSD23203WT datasheet PDF. This datasheet also covers the CSD23203W variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This 16.2-mΩ,

8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low RDS(on).
  • Small Footprint.
  • Low Profile 0.62-mm Height.
  • Lead Free.
  • RoHS Compliant.
  • Halogen Free.
  • CSP 1-mm × 1.5-mm Wafer Level Package 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CSD23203W-etcTI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23203W SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016 CSD23203W –8-V P-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. Top View D S G D S S Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.