CSD25304W1015T Datasheet | Texas Instruments

Features - 1 Ultra-Low Qg and Qgd - Small Footprint - Low Profile 0.62 mm Height - Pb Free - Ro HS pliant - Halogen Free - CSP 1 × 1.5 mm Wafer Level Package 2 Applications - Battery Management - Load Switch - Battery Protection 3 Description This 27 mΩ, - 20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. Top View Product Summary TA = 25°C Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Voltage Threshold TYPICAL VALUE - 20 VGS = - 1.8...