Datasheet Details
| Part number | CSD25310Q2 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.79 MB |
| Description | P-Channel Power MOSFET |
| Download | CSD25310Q2 Download (PDF) |
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| Part number | CSD25310Q2 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.79 MB |
| Description | P-Channel Power MOSFET |
| Download | CSD25310Q2 Download (PDF) |
|
|
|
This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations.
RDS(on) - On-State Resistance (mΩ) 80 72 64 56 48 40 32 24 16 8 0 0 TC = 25°C, ID = −5A TC = 125°C, ID = −5A 1 2 3 4 5 6 7 8 − VGS - Gate-to- Source Voltage (V) G001 RDS(on) vs VGS − VGS - Gate-to-Source Voltage (V) 5 4.5 ID = −5A VDS = −10V 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Qg - Gate Charge (nC) G001 Gate Charge Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage –20 Qg Gate Charge Total (–4.5V) 3.6 Qgd Gate Charge Gate to Drain 0.5 VGS = –1.8V 59.0 RDS(on) Drain-to-Source On Resistance VGS = –2.5V 27.0 VGS = –4.5V 19.9 VGS(th) Threshold Voltage -0.85 UNIT V nC nC mΩ mΩ mΩ V Device CSD25310Q2 CSD25310Q2T .
CSD25310Q2 SLPS459C – JANUARY 2014 – REVISED FEBRUARY 2025 CSD25310Q2 20V P-Channel NexFET™ Power MOSFETs.
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