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CSD25310Q2T - P-Channel Power MOSFET

This page provides the datasheet information for the CSD25310Q2T, a member of the CSD25310Q2 P-Channel Power MOSFET family.

Datasheet Summary

Description

This 19.9mΩ,

20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

Features

  • Ultra-low Qg and Qgd.
  • Low on resistance.
  • Low thermal resistance.
  • Pb-free.
  • RoHS compliant.
  • Halogen free.
  • SON 2mm × 2mm plastic package 2.

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Datasheet preview – CSD25310Q2T

Datasheet Details

Part number CSD25310Q2T
Manufacturer Texas Instruments
File Size 1.79 MB
Description P-Channel Power MOSFET
Datasheet download datasheet CSD25310Q2T Datasheet
Additional preview pages of the CSD25310Q2T datasheet.

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Full PDF Text Transcription

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CSD25310Q2 SLPS459C – JANUARY 2014 – REVISED FEBRUARY 2025 CSD25310Q2 20V P-Channel NexFET™ Power MOSFETs 1 Features • Ultra-low Qg and Qgd • Low on resistance • Low thermal resistance • Pb-free • RoHS compliant • Halogen free • SON 2mm × 2mm plastic package 2 Applications • Battery management • Load management • Battery protection 3 Description This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations.
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