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CSD25302Q2 - P-Channel Power MOSFET

Datasheet Summary

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Features

  • 1.
  • Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 2-mm × 2-mm Plastic Package.

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Datasheet preview – CSD25302Q2

Datasheet Details

Part number CSD25302Q2
Manufacturer Texas Instruments
File Size 133.05 KB
Description P-Channel Power MOSFET
Datasheet download datasheet CSD25302Q2 Datasheet
Additional preview pages of the CSD25302Q2 datasheet.

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Full PDF Text Transcription

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CSD25302Q2 www.ti.com SLPS234B – NOVEMBER 2009 – REVISED JANUARY 2012 P-Channel NexFET™ Power MOSFET FEATURES 1 • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 2-mm × 2-mm Plastic Package APPLICATIONS • Battery Management • Load Management • Battery Protection DESCRIPTION The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on resistance coupled with the extremely small footprint and low profile make the device ideal for battery operated space constrained applications. Top View S1 S 6S PRODUCT SUMMARY VDS Drain to Source Voltage –20 V Qg Gate Charge Total (–4.5V) 2.
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