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CSD25304W1015T Datasheet P-Channel Power MOSFET

Manufacturer: Texas Instruments

Download the CSD25304W1015T datasheet PDF. This datasheet also includes the CSD25304W1015 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (CSD25304W1015-etcTI.pdf) that lists specifications for multiple related part numbers.

General Description

This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.

Top View D D S S S G Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source OnResistance VGS(th) Voltage Threshold TYPICAL VALUE –20 3.3 0.5 VGS = –1.8 V 65 VGS = –2.5 V 36 VGS = –4.5 V 27 –0.8 UNIT V nC nC mΩ mΩ mΩ V Ordering Information(1) Device Qty Media Package CSD25304W1015 3000 7-Inch Reel CSD25304W1015T 250 7-Inch Reel 1.0 mm × 1.5 mm Wafer Level Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current(1) IDM Pulsed Drain Current(2) PD Power Dissipation TJ, Operating Junction and Tstg Storage Temperature Range VALUE –20 ±8 –3.0 –41 0.75 UNIT V V A A W –55 to 150 °C (1) Device operating at a temperature of 105ºC (2) Typ RθJA = 165°C/W, Pulse width ≤100 μs, duty cycle ≤1% RDS(on) - On-State Resistance (mΩ) − VGS - Gate-to-Source Voltage (V) 80 70 60 50 40 30 20 0 P0099-01 RDS(on) vs VGS TC = 25°C,I D = −1.5 A TC = 125°C,I D = −1.5 A 1 2 3 4 5 6 7 8 − VGS - Gate-to- Source Voltage (V) G001 Gate Charge 4.5 ID = −1.5A 4 VDS = −10V 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 Qg - Gate Charge (nC)

Overview

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD25304W1015 SLPS510A – JULY 2014 – REVISED AUGUST 2014 CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Small Footprint.
  • Low Profile 0.62 mm Height.
  • Pb Free.
  • RoHS Compliant.
  • Halogen Free.
  • CSP 1 × 1.5 mm Wafer Level Package 2.

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