CSD25310Q2T Datasheet | Texas Instruments

Features - Ultra-low Qg and Qgd - Low on resistance - Low thermal resistance - Pb-free - Ro HS pliant - Halogen free - SON 2mm × 2mm plastic package 2 Applications - Battery management - Load management - Battery protection 3 Description This 19.9mΩ, - 20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations. RDS(on) - On-State Resistance (mΩ) 80 72 64 56 48 40 32 24 16 8 0 TC = 25°C, ID = - 5A TC = 125°C, ID = - 5A - VGS - Gate-to- Source Voltage (V) G001 RDS(on) vs VGS - VGS - Gate-to-Source Voltage (V) ID...