• Part: CSD86311W1723
  • Description: Dual N-Channel Power MOSFET
  • Manufacturer: Texas Instruments
  • Size: 458.83 KB
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Datasheet Summary

.ti. Dual N-Channel NexFET™ Power MOSFET Check for Samples: CSD86311W1723 SLPS251 - MAY 2010 Features - Dual N-Ch MOSFETs - mon Source Configuration - Small Footprint 1.7 mm × 2.3 mm - Ultra Low Qg and Qgd - Pb Free - RoHS pliant - Halogen Free APPLICATIONS - Battery Management - Battery Protection - DC-DC Converters PRODUCT SUMMARY Drain to Source Voltage Qg Gate Charge Total (4.5V) 3.1 nC Qgd Gate Charge Gate to Drain 0.33 nC VGS = 2.5V 37 mΩ RDS(on) Drain to Source On Resistance VGS = 4.5V 31 mΩ VGS =...