CSD85301Q2 Datasheet | Texas Instruments

Features - 1 Low On-Resistance - Dual Independent MOSFETs - Space Saving SON 2 × 2 mm Plastic Package - Optimized for 5 V Gate Driver - Avalanche Rated - Pb and Halogen Free - Ro HS pliant 2 Applications - Point-of-Load Synchronous Buck Converter for Applications in Networking, Tele, and puting Systems - Adaptor or USB Input Protection for Notebook PCs and Tablets - Battery Protection 3 Description The CSD85301Q2 is a 20 V, 23 mΩ N-Channel device with dual independent MOSFETs in a SON 2 x 2 mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low ponent count for space constrained applications. Top View and Circuit Image Drain Drain S1 D1 D1 G1 G2 Gate Gate . Product Summary TA = 25°C Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 1.8...