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CSD85302L Datasheet 20V Dual N-Channel Power MOSFET

Manufacturer: Texas Instruments

Overview: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD85302L SLPS561 – NOVEMBER 2015 CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET.

General Description

This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance in the smallest footprint.

Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.

Top View G1 S1 S2 G2 Source 1 Configuration Source 2 Text added for spacing Product Summary TA = 25°C TYPICAL VALUE VS1S2 Source-to-Source Voltage 20 Qg Gate Charge Total (4.5 V) 6 Qgd Gate Charge Gate-to-Drain 1.4 VGS = 2.5 V 29 RS1S2(on) Source-to-Source On-Resistance VGS = 4.5 V 20 VGS = 6.5 V 18.7 VGS(th) Threshold Voltage 0.9 UNIT V nC nC mΩ mΩ mΩ V DEVICE CSD85302L CSD85302LT Ordering Information(1) QTY MEDIA PACKAGE 3000 250 7-Inch Reel 1.35 × 1.35 mm Land Grid Array (LGA) Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Key Features

  • 1 Common Drain Configuration.
  • Low On-Resistance.
  • Small Footprint of 1.35 mm × 1.35 mm.
  • Pb Free and Halogen Free.
  • RoHS Compliant.
  • ESD HBM Protection >2.5 kV 2.