CSD85302L Datasheet | Texas Instruments

Features - 1 mon Drain Configuration - Low On-Resistance - Small Footprint of 1.35 mm × 1.35 mm - Pb Free and Halogen Free - Ro HS pliant - ESD HBM Protection >2.5 k V 2 Applications - USB Type-C/PD - Battery Management - Battery Protection 3 Description This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual Nex FET™ power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and mon drain configuration make the device ideal for battery-powered applications in small handheld devices. Top View G1 S1 S2 G2 Source 1 Configuration Source 2 Text added for spacing Product Summary TA = 25°C TYPICAL VALUE VS1S2 Source-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain VGS = 2.5 V 29 RS1S2(on) Source-to-Source On-Resistance VGS = 4.5 V 20 VGS = 6.5 V 18.7 VGS(th) Threshold Voltage UNIT V n C n C mΩ mΩ mΩ V DEVICE CSD85302L...