CSD85312Q3E Datasheet 20V Dual N-Channel Power MOSFET

Manufacturer: Texas Instruments

Overview: CSD85312Q3E www.ti.com SLPS457 – NOVEMBER 2013 Dual 20 V N-Channel NexFET™ Power.

CSD85312Q3E 20v dual n-channel power mosfet by Texas Instruments - Datasheet Preview

Datasheet Details

Part number	CSD85312Q3E
Manufacturer	Texas Instruments
File Size	1.02 MB
Description	20V Dual N-Channel Power MOSFET
Download	CSD85312Q3E Download (PDF)

General Description

The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection.

This SON 3.3 x 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.

Top View D1 1 8 D2 D1 2 7 D2 S D1 3 6 D2 NC 4 5G Circuit Image Common Source Drain 1 Drain 2 Common Gate .

Key Features

1.
Common Source Connection.
Low Drain to Drain On-Resistance.
Space Saving SON 3.3 x 3.3 mm Plastic Package.
Optimized for 5 V Gate Drive.
Low Thermal Resistance.
Avalanche Rated.
Pb-Free Terminal Plating.
RoHS Compliant.
Halogen Free.

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