CSD85312Q3E Datasheet | Texas Instruments

FEATURES - mon Source Connection - Low Drain to Drain On-Resistance - Space Saving SON 3.3 x 3.3 mm Plastic Package - Optimized for 5 V Gate Drive - Low Thermal Resistance - Avalanche Rated - Pb-Free Terminal Plating - Ro HS pliant - Halogen Free APPLICATIONS - Adaptor or USB Input Protection for Notebook PCs and Tablets DESCRIPTION The CSD85312Q3E is a 20 V mon-source, dual N-channel device designed for adaptor or USB input protection. This SON 3.3 x 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low ponent count for space constrained multi-cell battery charging applications. Top View D1 1 8 D2 D1 2 7 D2 D1 3 6 D2 NC 4 5G Circuit Image mon Source Drain 1 Drain 2 mon Gate . PRODUCT SUMMARY TA = 25°C Drain to Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate to Drain RDD(on) Drain to Drain On Resistance (Q1 + Q2) VGS(th) Threshold...