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CSD85312Q3E - 20V Dual N-Channel Power MOSFET

Datasheet Summary

Description

The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection.

This SON 3.3 x 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.

Features

  • 1.
  • Common Source Connection.
  • Low Drain to Drain On-Resistance.
  • Space Saving SON 3.3 x 3.3 mm Plastic Package.
  • Optimized for 5 V Gate Drive.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.

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Datasheet preview – CSD85312Q3E

Datasheet Details

Part number CSD85312Q3E
Manufacturer Texas Instruments
File Size 1.02 MB
Description 20V Dual N-Channel Power MOSFET
Datasheet download datasheet CSD85312Q3E Datasheet
Additional preview pages of the CSD85312Q3E datasheet.

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Full PDF Text Transcription

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CSD85312Q3E www.ti.com SLPS457 – NOVEMBER 2013 Dual 20 V N-Channel NexFET™ Power MOSFETs FEATURES 1 • Common Source Connection • Low Drain to Drain On-Resistance • Space Saving SON 3.3 x 3.3 mm Plastic Package • Optimized for 5 V Gate Drive • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free APPLICATIONS • Adaptor or USB Input Protection for Notebook PCs and Tablets DESCRIPTION The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection. This SON 3.3 x 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
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