CSD86311W1723 Datasheet | Texas Instruments

FEATURES - Dual N-Ch MOSFETs - mon Source Configuration - Small Footprint 1.7 mm × 2.3 mm - Ultra Low Qg and Qgd - Pb Free - Ro HS pliant - Halogen Free APPLICATIONS - Battery Management - Battery Protection - DC-DC Converters PRODUCT SUMMARY Drain to Source Voltage Qg Gate Charge Total (4.5V) 3.1 n C Qgd Gate Charge Gate to Drain 0.33 n C VGS = 2.5V 37 mΩ RDS(on) Drain to Source On Resistance VGS = 4.5V 31 mΩ VGS = 8V 29 mΩ VGS(th) Threshold Voltage Text Added for Spacing ORDERING INFORMATION Device Package Media Qty 1.7-mm × 2.3-mm CSD86311W1723 Wafer Level 7-inch reel Package Ship...