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CSD86311W1723 - Dual N-Channel Power MOSFET

Datasheet Summary

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile.

Features

  • 1.
  • Dual N-Ch MOSFETs.
  • Common Source Configuration.
  • Small Footprint 1.7 mm × 2.3 mm.
  • Ultra Low Qg and Qgd.
  • Pb Free.
  • RoHS Compliant.
  • Halogen Free.

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Datasheet preview – CSD86311W1723

Datasheet Details

Part number CSD86311W1723
Manufacturer Texas Instruments
File Size 458.83 KB
Description Dual N-Channel Power MOSFET
Datasheet download datasheet CSD86311W1723 Datasheet
Additional preview pages of the CSD86311W1723 datasheet.

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Full PDF Text Transcription

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CSD86311W1723 www.ti.com Dual N-Channel NexFET™ Power MOSFET Check for Samples: CSD86311W1723 SLPS251 – MAY 2010 FEATURES 1 • Dual N-Ch MOSFETs • Common Source Configuration • Small Footprint 1.7 mm × 2.3 mm • Ultra Low Qg and Qgd • Pb Free • RoHS Compliant • Halogen Free APPLICATIONS • Battery Management • Battery Protection • DC-DC Converters PRODUCT SUMMARY VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 3.1 nC Qgd Gate Charge Gate to Drain 0.33 nC VGS = 2.5V 37 mΩ RDS(on) Drain to Source On Resistance VGS = 4.5V 31 mΩ VGS = 8V 29 mΩ VGS(th) Threshold Voltage 1 V Text Added for Spacing ORDERING INFORMATION Device Package Media Qty 1.7-mm × 2.
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