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CSD83325L Datasheet 12-V Dual N-Channel Power MOSFET

Manufacturer: Texas Instruments

Overview: Product Folder Order Now Technical Documents Tools & Software Support & Community CSD83325L SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017 CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET.

General Description

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint.

Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

Top View S1 S2 G1 G2 S1 S2 Configuration Product Summary TA = 25°C TYPICAL VALUE VS1S2 Source-to-Source Voltage 12 Qg Gate Charge Total (4.5 V) 8.4 Qgd Gate Charge Gate-to-Drain 1.9 VGS = 2.5 V 17.5 RS1S2(on) Source-to-Source On Resistance VGS = 3.8 V 10.9 VGS = 4.5 V 9.9 VGS(th) Threshold Voltage 0.95 UNIT V nC nC mΩ mΩ mΩ V DEVICE CSD83325L CSD83325LT Device Information(1) QTY MEDIA PACKAGE SHIP 3000 250 7-Inch Reel 2.20-mm × 1.15-mm Tape Land Grid Array (LGA) and Package Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Key Features

  • 1 Common Drain Configuration.
  • Low-On Resistance.
  • Small Footprint of 2.2 mm × 1.15 mm.
  • Lead Free.
  • RoHS Compliant.
  • Halogen Free.
  • Gate ESD Protection 2.