CSD83325L Description
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and mon drain configuration make the device ideal for battery pack applications in small handheld devices. (2) Typical min Cu RθJA = 150°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
CSD83325L Key Features
- 1 mon Drain Configuration
- Low-On Resistance
- Small Footprint of 2.2 mm × 1.15 mm
- Lead Free
- RoHS pliant
- Halogen Free
- Gate ESD Protection