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CSD83325L - 12-V Dual N-Channel Power MOSFET

Datasheet Summary

Description

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint.

Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

Features

  • 1 Common Drain Configuration.
  • Low-On Resistance.
  • Small Footprint of 2.2 mm × 1.15 mm.
  • Lead Free.
  • RoHS Compliant.
  • Halogen Free.
  • Gate ESD Protection 2.

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Datasheet preview – CSD83325L

Datasheet Details

Part number CSD83325L
Manufacturer Texas Instruments
File Size 1.26 MB
Description 12-V Dual N-Channel Power MOSFET
Datasheet download datasheet CSD83325L Datasheet
Additional preview pages of the CSD83325L datasheet.

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Full PDF Text Transcription

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD83325L SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017 CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET 1 Features •1 Common Drain Configuration • Low-On Resistance • Small Footprint of 2.2 mm × 1.15 mm • Lead Free • RoHS Compliant • Halogen Free • Gate ESD Protection 2 Applications • Battery Management • Battery Protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.
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