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ISO5452 Datasheet Preview

ISO5452 Datasheet

High-CMTI 2.5-A and 5-A Isolated IGBT MOSFET Gate Driver

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ISO5452
SLLSEQ4B – AUGUST 2015 – REVISED JANUARY 2017
ISO5452 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver
With Split Outputs and Active Protection Features
1 Features
1 50-kV/μs Minimum and 100-kV/μs Typical
Common-Mode Transient Immunity (CMTI)
at VCM = 1500 V
• Split Outputs to provide 2.5-A Peak Source and
5-A Peak Sink Currents
• Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
• 2-A Active Miller Clamp
• Output Short-Circuit Clamp
• Soft Turn-Off (STO) during Short Circuit
• Fault Alarm upon Desaturation Detection is
Signaled on FLT and Reset Through RST
• Input and Output Undervoltage Lockout (UVLO)
With Ready (RDY) Pin Indication
• Active Output Pulldown and Default Low Outputs
With Low Supply or Floating Inputs
• 2.25-V to 5.5-V Input Supply Voltage
• 15-V to 30-V Output Driver Supply Voltage
• CMOS Compatible Inputs
• Rejects Input Pulses and Noise Transients
Shorter Than 20 ns
• Operating Temperature: –40°C to +125°C
Ambient
• Isolation Surge Withstand Voltage 10000-VPK
• Safety-Related Certifications:
– 8000-VPK VIOTM and 1420-VPK VIORM
Reinforced Isolation per DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
– 5700-VRMS Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950–1 and IEC 60601–1 End Equipment
Standards
– TUV Certification per EN 61010-1 and EN
60950-1
– GB4943.1-2011 CQC Certification
2 Applications
• Isolated IGBT and MOSFET Drives in:
– Industrial Motor Control Drives
– Industrial Power Supplies
– Solar Inverters
– HEV and EV Power Modules
– Induction Heating
3 Description
The ISO5452 is a 5.7-kVRMS, reinforced isolated gate
driver for IGBTs and MOSFETs with split outputs,
OUTH and OUTL, providing 2.5-A source and 5-A
sink current. The input side operates from a single
2.25-V to 5.5-V supply. The output side allows for a
supply range from minimum 15 V to maximum
30 V. Two complementary CMOS inputs control the
output state of the gate driver. The short propagation
time of 76 ns assures accurate control of the output
stage.
An internal desaturation (DESAT) fault detection
recognizes when the IGBT is in an overcurrent
condition. Upon a DESAT detect, a Mute logic
immediately blocks the output of the isolator and
initiates a soft-turn-off procedure which disables
OUTH, and pulls OUTL to low over a time span of
2 μs. When OUTL reaches 2 V with respect to the
most negative supply potential, VEE2, the gate driver
output is pulled hard to VEE2 potential, turning the
IGBT immediately off.
Device Information(1)
PART NUMBER PACKAGE
BODY SIZE (NOM)
ISO5452
SOIC (16)
10.30 mm × 7.50 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Functional Block Diagram
VCC1
VCC1
IN±
UVLO1
IN+
RDY
VCC1
FLT
VCC1
VCC1
RST
Ready
QS
Fault
QR
Decoder
VCC2
UVLO2
Mute
Gate Drive
and
Encoder
Logic
500 µA
9V
VCC2
DESAT
GND2
OUTH
STO
OUTL
2 V CLAMP
GND1
VEE2
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




etcTI

ISO5452 Datasheet Preview

ISO5452 Datasheet

High-CMTI 2.5-A and 5-A Isolated IGBT MOSFET Gate Driver

No Preview Available !

ISO5452
SLLSEQ4B – AUGUST 2015 – REVISED JANUARY 2017
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Description (continued)......................................... 4
6 Pin Configuration and Function ........................... 4
7 Specifications......................................................... 5
7.1 Absolute Maximum Ratings ...................................... 5
7.2 ESD Ratings.............................................................. 5
7.3 Recommended Operating Conditions....................... 5
7.4 Thermal Information .................................................. 6
7.5 Power Ratings........................................................... 6
7.6 Insulation Specifications............................................ 7
7.7 Safety-Related Certifications..................................... 8
7.8 Safety Limiting Values .............................................. 8
7.9 Electrical Characteristics........................................... 9
7.10 Switching Characteristics ...................................... 11
7.11 Insulation Characteristics Curves ......................... 12
7.12 Typical Characteristics .......................................... 13
8 Parameter Measurement Information ................ 20
9 Detailed Description ............................................ 22
9.1 Overview ................................................................. 22
9.2 Functional Block Diagram ....................................... 22
9.3 Feature Description................................................. 23
9.4 Device Functional Modes........................................ 24
10 Application and Implementation........................ 25
10.1 Application Information.......................................... 25
10.2 Typical Applications .............................................. 25
11 Power Supply Recommendations ..................... 35
12 Layout................................................................... 35
12.1 Layout Guidelines ................................................. 35
12.2 PCB Material ......................................................... 35
12.3 Layout Example .................................................... 35
13 Device and Documentation Support ................. 36
13.1 Documentation Support ........................................ 36
13.2 Receiving Notification of Documentation Updates 36
13.3 Community Resources.......................................... 36
13.4 Trademarks ........................................................... 36
13.5 Electrostatic Discharge Caution ............................ 36
13.6 Glossary ................................................................ 36
14 Mechanical, Packaging, and Orderable
Information ........................................................... 36
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (September 2015) to Revision B
Page
• Changed the title from Active Safety Features to Active Protection Features ...................................................................... 1
• Changed Feature From: Surge Immunity 10000-VPK (according to IEC 61000-4-5) To: Isolation Surge Withstand
Voltage 10000-VPK.................................................................................................................................................................. 1
• Moved Insulation Specifications to the Specifications section ............................................................................................... 7
• Changed RIO Test conditions From: TS To: TS = 150°C in Insulation Specifications ............................................................. 7
• Moved Safety-Related Certifications to the Specifications section ........................................................................................ 8
• Moved Safety Limiting Values to the Specifications section .................................................................................................. 8
• Moved Insulation Characteristics Curves to the Specifications............................................................................................ 12
• Added text ", but connecting CLAMP output of the gate driver to the IGBT gate is also not an issue." to Supply and
Active Miller Clamp............................................................................................................................................................... 23
• Deleted ground symbol on pin 11 of the Global Shutdown With Inverting Input Configuration figure ................................. 30
• Deleted ground symbol on pin 11 on the inverting input of the Auto Reset for Noninverting and Inverting Input
Configuration figure .............................................................................................................................................................. 30
• Added the Receiving Notification of Documentation Updates section ................................................................................. 36
• Changed the Electrostatic Discharge Caution...................................................................................................................... 36
Changes from Original (August 2015) to Revision A
Page
• Changed from a 1-page Product Preview to the full datasheet ............................................................................................ 1
• Moved Features: "50-kV/μs Minimum and 100-kV/μs Typical Common-Mode Transient Immunity.." to the top of the list ... 1
• Changed the status of all certifications to complete .............................................................................................................. 1
• Changed the Functional Block Diagram, added STO on pin OUTL....................................................................................... 1
• Changed RIO Test conditions From: 100°C TA max To: 100°C TA 125°C in Insulation Specifications ...................... 7
2 Submit Documentation Feedback
Product Folder Links: ISO5452
Copyright © 2015–2017, Texas Instruments Incorporated


Part Number ISO5452
Description High-CMTI 2.5-A and 5-A Isolated IGBT MOSFET Gate Driver
Maker etcTI
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