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ISO5852S Datasheet Preview

ISO5852S Datasheet

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT MOSFET Gate Driver

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ISO5852S
SLLSEQ0B – AUGUST 2015 – REVISED JANUARY 2017
ISO5852S High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver
With Split Outputs and Active Protection Features
1 Features
1 100-kV/μs Minimum Common-Mode Transient
Immunity (CMTI) at VCM = 1500 V
• Split Outputs to Provide 2.5-A Peak Source and
5-A Peak Sink Currents
• Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
• 2-A Active Miller Clamp
• Output Short-Circuit Clamp
• Soft Turn-Off (STO) during Short Circuit
• Fault Alarm upon Desaturation Detection is
Signaled on FLT and Reset Through RST
• Input and Output Undervoltage Lockout (UVLO)
with Ready (RDY) Pin Indication
• Active Output Pulldown and Default Low Outputs
with Low Supply or Floating Inputs
• 2.25-V to 5.5-V Input Supply Voltage
• 15-V to 30-V Output Driver Supply Voltage
• CMOS Compatible Inputs
• Rejects Input Pulses and Noise Transients
Shorter Than 20 ns
• Operating Temperature: –40°C to +125°C
Ambient
• Isolation Surge Withstand Voltage 12800-VPK
• Safety-Related Certifications:
– 8000-VPK VIOTM and 2121-VPK VIORM
Reinforced Isolation per DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
– 5700-VRMS Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950–1 and IEC 60601–1 End Equipment
Standards
– TUV Certification per EN 61010-1 and EN
60950-1
– GB4943.1-2011 CQC Certification
2 Applications
• Isolated IGBT and MOSFET Drives in:
– Industrial Motor Control Drives
– Industrial Power Supplies
– Solar Inverters
– HEV and EV Power Modules
– Induction Heating
3 Description
The ISO5852S device is a 5.7-kVRMS, reinforced
isolated gate driver for IGBTs and MOSFETs with
split outputs, OUTH and OUTL, providing 2.5-A
source and 5-A sink current. The input side operates
from a single 2.25-V to 5.5-V supply. The output side
allows for a supply range from minimum 15 V to
maximum 30 V. Two complementary CMOS inputs
control the output state of the gate driver. The short
propagation time of 76 ns provides accurate control
of the output stage.
An internal desaturation (DESAT) fault detection
recognizes when the IGBT is in an overcurrent
condition. Upon a DESAT detect, a mute logic
immediately blocks the output of the isolator and
initiates a soft-turnoff procedure which disables the
OUTH pin and pulls the OUTL pin to low over a time
span of 2 μs. When the OUTL pin reaches 2 V with
respect to the most-negative supply potential, VEE2,
the gate-driver output is pulled hard to the VEE2
potential, turning the IGBT immediately off.
Device Information(1)
PART NUMBER PACKAGE
BODY SIZE (NOM)
ISO5852S
SOIC (16)
10.30 mm × 7.50 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
VCC1
IN±
IN+
RDY
VCC1
FLT
VCC1
VCC1
RST
Functional Block Diagram
VCC1
VCC2
UVLO1
UVLO2
500 µA
Mute
9V
VCC2
DESAT
GND2
Ready
QS
Fault
QR
Decoder
Gate Drive
and
Encoder
Logic
OUTH
STO
OUTL
2 V CLAMP
GND1
VEE2
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




etcTI

ISO5852S Datasheet Preview

ISO5852S Datasheet

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT MOSFET Gate Driver

No Preview Available !

ISO5852S
SLLSEQ0B – AUGUST 2015 – REVISED JANUARY 2017
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Description (continued)......................................... 4
6 Pin Configuration and Function ........................... 4
7 Specifications......................................................... 5
7.1 Absolute Maximum Ratings ...................................... 5
7.2 ESD Ratings.............................................................. 5
7.3 Recommended Operating Conditions....................... 5
7.4 Thermal Information .................................................. 6
7.5 Power Ratings........................................................... 6
7.6 Insulation Specifications............................................ 7
7.7 Safety-Related Certifications..................................... 8
7.8 Safety Limiting Values .............................................. 8
7.9 Electrical Characteristics........................................... 9
7.10 Switching Characteristics ...................................... 10
7.11 Insulation Characteristics Curves ......................... 11
7.12 Typical Characteristics .......................................... 12
8 Parameter Measurement Information ................ 19
9 Detailed Description ............................................ 21
9.1 Overview ................................................................. 21
9.2 Functional Block Diagram ....................................... 21
9.3 Feature Description................................................. 22
9.4 Device Functional Modes........................................ 23
10 Application and Implementation........................ 24
10.1 Application Information.......................................... 24
10.2 Typical Applications .............................................. 24
11 Power Supply Recommendations ..................... 32
12 Layout................................................................... 32
12.1 Layout Guidelines ................................................. 32
12.2 PCB Material ......................................................... 32
12.3 Layout Example .................................................... 32
13 Device and Documentation Support ................. 33
13.1 Documentation Support ........................................ 33
13.2 Receiving Notification of Documentation Updates 33
13.3 Community Resources.......................................... 33
13.4 Trademarks ........................................................... 33
13.5 Electrostatic Discharge Caution ............................ 33
13.6 Glossary ................................................................ 33
14 Mechanical, Packaging, and Orderable
Information ........................................................... 33
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (September 2015) to Revision B
Page
• Changed the title of the data sheet from Active Safety Features to Active Protection Features ........................................... 1
• Changed Feature From: Surge Immunity 12800-VPK (according to IEC 61000-4-5) To: Isolation Surge Withstand
Voltage 12800-VPK.................................................................................................................................................................. 1
• Changed the minimum external tracking (creepage) parameter to the external creepage parameter .................................. 7
• Changed the input-to-output test voltage parameter to the apparent charge parameter....................................................... 7
• Added the climatic category to the Insulation Specifications table......................................................................................... 7
• Changed the CSA status from planned to certified ................................................................................................................ 8
• Added text ", but connecting CLAMP output of the gate driver to the IGBT gate is also not an issue." to Supply and
Active Miller Clamp............................................................................................................................................................... 22
• Changed the second paragraph of the Typical Applications................................................................................................ 24
• Added text "and RST input signal" to the Design Requirements ......................................................................................... 25
• Changed the Electrostatic Discharge Caution...................................................................................................................... 33
Changes from Original (July 2015) to Revision A
Page
• Moved Features: "100-kV/μs Minimum Common-Mode Transient Immunity.." to the top of the list ..................................... 1
• Changed from a 1-page Product Preview to the full datasheet. ........................................................................................... 1
• Changed text "single 3-V To: 5.5-V supply" to "single 2.25-V to 5.5-V supply" in the Description ........................................ 1
• Changed text "IGBT is in an overload condition" To: "IGBT is in an overcurrent condition" in the Description..................... 1
• Changed text "and reduces the voltage at OUTL over a minimum time span of 2 μs" To: "and pulls OUTL to low
over a time span of 2 μs" in the Description........................................................................................................................... 1
• Changed the Functional Block Diagram, added STO on pin OUTL....................................................................................... 1
• Changed paragraph 3 of the Description ............................................................................................................................... 4
2 Submit Documentation Feedback
Product Folder Links: ISO5852S
Copyright © 2015–2017, Texas Instruments Incorporated


Part Number ISO5852S
Description High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT MOSFET Gate Driver
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