Datasheet4U Logo Datasheet4U.com

LM5113 - Half Bridge GaN Driver

Description

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration.

The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V.

Features

  • 1 Independent high-side and low-side TTL logic inputs.
  • 1.2 A / 5 A peak source/sink current.
  • High-side floating bias voltage rail Operates up to 100 VDC.
  • Internal bootstrap supply voltage clamping.
  • Split outputs for adjustable turnon/turnoff strength.
  • 0.6-Ω / 2.1-Ω pulldown/pullup resistance.
  • Fast propagation times (28 ns typical).
  • Excellent propagation delay matching (1.5 ns typical).
  • Supply rail undervoltage locko.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LM5110 Dual 5A Compound Gate Driver National Semiconductor
LM5111 Dual 5A Compound Gate Driver National Semiconductor
LM5112 Tiny 7A MOSFET Gate Driver National Semiconductor
LM5115 Secondary Side Post Regulator Controller National Semiconductor
LM5115A Secondary Side Post Regulator/DC-DC Converter National Semiconductor

Other Datasheets by Texas Instruments

Part Number Description
LM5110 Dual 5-A Compound Gate Driver
LM5111 Dual 5-A Compound Gate Driver
LM5112 Tiny 7-A MOSFET Gate Driver
LM5112-Q1 Tiny 7-A MOSFET Gate Driver
LM5114 Low-Side Gate Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Order Now Technical Documents Tools & Software Support & Community LM5113 SNVS725I – JUNE 2011 – REVISED OCTOBER 2019 LM5113 80-V, 1.2-A, 5-A, Half Bridge GaN Driver 1 Features •1 Independent high-side and low-side TTL logic inputs • 1.2 A / 5 A peak source/sink current • High-side floating bias voltage rail Operates up to 100 VDC • Internal bootstrap supply voltage clamping • Split outputs for adjustable turnon/turnoff strength • 0.6-Ω / 2.1-Ω pulldown/pullup resistance • Fast propagation times (28 ns typical) • Excellent propagation delay matching (1.
Published: |