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LMG3411R070 - GaN

Download the LMG3411R070 datasheet PDF. This datasheet also covers the LMG3410R070 variant, as both devices belong to the same gan family and are provided as variant models within a single manufacturer datasheet.

General Description

The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

Key Features

  • 1 TI GaN Process Qualified Through Accelerated Reliability In-.

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Note: The manufacturer provides a single datasheet file (LMG3410R070-etcTI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for LMG3411R070 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LMG3411R070. For precise diagrams, and layout, please refer to the original PDF.

Product Folder Order Now Technical Documents Tools & Software Support & Community LMG3410R070, LMG3411R070 SNOSD10F – APRIL 2016 – REVISED MAY 2020 LMG341xR070 600-V 70-m...

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11R070 SNOSD10F – APRIL 2016 – REVISED MAY 2020 LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features •1 TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout – Adjustable Drive Strength for Switching Performance and EMI Control – Digital Fault Status Output Signal – Only +12 V Unregulated Supply Needed • Integrated Gate Driver – Zero Common Source Inductance – 20 ns Pr

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