LMG3410R070 Overview
The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and...
LMG3410R070 Key Features
- 1 TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles
- Enables High Density Power Conversion Designs
- Superior System Performance Over Cascode or Stand-alone GaN FETs
- Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout
- Adjustable Drive Strength for Switching Performance and EMI Control
- Digital Fault Status Output Signal
- Only +12 V Unregulated Supply Needed
- Integrated Gate Driver
- Zero mon Source Inductance
- 20 ns Propagation Delay for MHz Operation