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LMG3410R070 - GaN

General Description

The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

Key Features

  • 1 TI GaN Process Qualified Through Accelerated Reliability In-.

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LMG3410R050 Integrated GaN Fet Power Stage
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Order Now Technical Documents Tools & Software Support & Community LMG3410R070, LMG3411R070 SNOSD10F – APRIL 2016 – REVISED MAY 2020 LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features •1 TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout – Adjustable Drive Strength for Switching Performance and EMI Control – Digital Fault Status Output Signal – Only +12 V Unregulated Supply Needed • Integrated Gate Driver – Zero Common Source Inductance – 20 ns Propagation Delay for MHz Operation – Process-tuned Gate Bias Volt