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LMG3410R050 - Integrated GaN Fet Power Stage

General Description

The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

Key Features

  • 1 TI GaN FET reliability qualified with in-.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Order Now Technical Documents Tools & Software Support & Community LMG3410R050, LMG3411R050 SNOSD81B – SEPTEMBER 2018 – REVISED JANUARY 2020 LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features •1 TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and layout – Adjustable drive strength for switching performance and EMI control – Digital fault status output signal – Only +12 V unregulated supply needed • Integrated gate driver – Zero common source inductance – 20 ns Propagation delay for MHz operation – Trimmed g