• Part: LMG3410R050
  • Description: Integrated GaN Fet Power Stage
  • Manufacturer: Texas Instruments
  • Size: 1.54 MB
Download LMG3410R050 Datasheet PDF
Texas Instruments
LMG3410R050
LMG3410R050 is Integrated GaN Fet Power Stage manufactured by Texas Instruments.
Product Folder Order Now Technical Documents Tools & Software Support & munity LMG3410R050, LMG3411R050 SNOSD81B - SEPTEMBER 2018 - REVISED JANUARY 2020 LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features - 1 TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles - Enables high density power conversion designs - Superior system performance over cascode or stand-alone GaN FETs - Low inductance 8 mm x 8 mm QFN package for ease of design, and layout - Adjustable drive strength for switching performance and EMI control - Digital fault status output signal - Only +12 V unregulated supply needed -...