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LMG3410R050 Datasheet Integrated Gan Fet Power Stage

Manufacturer: Texas Instruments

Overview: Product Folder Order Now Technical Documents Tools & Software Support & munity LMG3410R050, LMG3411R050 SNOSD81B – SEPTEMBER 2018 – REVISED JANUARY 2020 LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With.

General Description

The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI.

These advantages enable dense and efficient topologies like th

Key Features

  • 1 TI GaN FET reliability qualified with in-.

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