Datasheet Details
| Part number | LMG3411R070 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.55 MB |
| Description | GaN |
| Datasheet | LMG3411R070 LMG3410R070 Datasheet (PDF) |
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Overview: Product Folder Order Now Technical Documents Tools & Software Support & munity LMG3410R070, LMG3411R070 SNOSD10F – APRIL 2016 – REVISED MAY 2020 LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | LMG3411R070 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.55 MB |
| Description | GaN |
| Datasheet | LMG3411R070 LMG3410R070 Datasheet (PDF) |
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The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.
The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI.
These advantages enable dense and efficient topologies like the totem-pole PFC.
| Part Number | Description |
|---|---|
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| LMG3410R050 | Integrated GaN Fet Power Stage |
| LMG3410R070 | GaN |
| LMG3410R150 | GaN FET |
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