Datasheet Summary
SN54ABT827, SN74ABT827 10ĆBIT BUFFERS/DRIVERS
WITH 3ĆSTATE OUTPUTS
SCBS159E
- JANUARY 1991
- REVISED APRIL 2005
D State-of-the-Art EPIC-ΙΙB BiCMOS Design
Significantly Reduces Power Dissipation
D Flow-Through Architecture Optimizes PCB
Layout
D Latch-Up Performance Exceeds 500 mA Per
JEDEC Standard JESD-17
D Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
D High-Impedance State During Power Up and Power Down
D High-Drive Outputs (- 32-mA IOH, 64-mA IOL) D Package Options Include Plastic
Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), and Plastic (NT) and Ceramic (JT) DIPs description
SN54ABT827 . ....