Datasheet Summary
D State-of-the-Art EPIC-ΙΙB™ BiCMOS Design
Significantly Reduces Power Dissipation
D ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
D High-Impedance State During Power Up and Power Down
D Latch-Up Performance Exceeds 500 mA Per
JEDEC Standard JESD-17
D High-Drive Outputs (- 32-mA IOH, 64-mA IOL) D Package Options Include Plastic
Small-Outline (DW) Package, Ceramic Chip Carriers (FK), and Plastic (NT) and Ceramic (JT) DIPs description
The ’ABT861 are 10-bit transceivers designed for asynchronous munication between data buses. The control-function implementation allows for maximum flexibility in timing.
These devices allow...