Datasheet Summary
D State-of-the-Art EPIC-ΙΙB™ BiCMOS Design
Significantly Reduces Power Dissipation
D Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
D High-Impedance State During Power Up and Power Down
D High-Drive Outputs (- 32-mA IOH, 64-mA IOL) D Latch-Up Performance Exceeds 500 mA Per
JESD 17
D ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
D Package Options Include Plastic
Small-Outline (DW), Shrink Small-Outline (DB) Packages, and Thin Shrink Small-Outline (PW), Ceramic Chip Carriers (FK), Plastic (NT), and Ceramic (JT) DIPs description
SN54ABT863, SN74ABT863 9-BIT BUS TRANSCEIVERS
WITH 3-STATE OUTPUTS
SCBS201E
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