TLC271A Datasheet | Texas Instruments

description The TLC271 operational amplifier bines a wide range of input offset voltage grades with low offset voltage drift and high input impedance. In - No internal connection addition, the TLC271 offers a bias-select mode that allows the user to select the best bination of power dissipation and ac performance for a particular application. These devices use Texas Instruments silicon-gate Lin CMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. AVAILABLE OPTIONS PACKAGE VIOmax AT 25°C SMALL OUTLINE CHIP CARRIER CERAMIC DIP (D) (FK) (JG) 2 m V TLC271BCD 0°C to 70°C 5 m V TLC271ACD - - 10 m V TLC271CD 2 m V TLC271BID - 40°C to 85°C 5 m V TLC271AID - - 10 m V TLC271ID - 55°C to 125°C 10 m V TLC271MD TLC271MFK TLC271MJG The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC271BCDR). PLASTIC DIP (P) TLC271BCP TLC271ACP TLC271CP TLC271BIP TLC271AIP TLC271IP TLC271MP Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Lin CMOS is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright  2001, Texas Instruments Incorporated - POST OFFICE BOX 655303 DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B Lin CMOS PROGRAMMABLE LOW-POWER OPERATIONAL...